STP8NK80Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Length :

10.4mm

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Number of Terminations :

3

Turn-Off Delay Time :

48 ns

Mount :

Through Hole

Width :

4.6mm

Voltage - Rated DC :

800V

Contact Plating :

Tin

Power Dissipation :

140W

Series :

SuperMESH™

Pin Count :

3

Mounting Type :

Through Hole

Packaging :

Tube

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

800V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Turn On Delay Time :

17 ns

Element Configuration :

Single

Base Part Number :

STP8N

FET Type :

N-Channel

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Continuous Drain Current (ID) :

6.2A

Current Rating :

6.2A

Fall Time (Typ) :

28 ns

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Gate to Source Voltage (Vgs) :

30V

Height :

15.75mm

Rise Time :

30ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

140W Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 25V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

24.8A