STP8N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

17 Weeks

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

950m Ω @ 3A, 10V

Number of Elements :

1

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6A Tc

ECCN Code :

EAR99

Power Dissipation-Max :

110W Tc

Radiation Hardening :

No

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Series :

SuperMESH5™

Case Connection :

DRAIN

Resistance :

950mOhm

Rise Time :

14ns

Power Dissipation :

110W

Base Part Number :

STP8N

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

800V

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

32 ns

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Width :

4.6mm

Turn On Delay Time :

12 ns

Length :

10.4mm

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Height :

15.75mm

Element Configuration :

Single

Continuous Drain Current (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 100V

Drain Current-Max (Abs) (ID) :

6A

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

24A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 100µA