STP8N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Vgs (Max) :

±25V

Drain Current-Max (Abs) (ID) :

7A

Fall Time (Typ) :

11 ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.6mm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

28A

Operating Temperature :

150°C TJ

Base Part Number :

STP8N

Resistance :

600mOhm

Packaging :

Tube

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Series :

MDmesh™ V

Drain to Source Breakdown Voltage :

650V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Number of Terminations :

3

FET Type :

N-Channel

Number of Pins :

3

Height :

15.75mm

Pin Count :

3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Turn On Delay Time :

50 ns

Rise Time :

14ns

Turn-Off Delay Time :

20 ns

Threshold Voltage :

4V

Number of Elements :

1

Power Dissipation-Max :

70W Tc

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Additional Feature :

ULTRA-LOW RESISTANCE

Length :

10.4mm

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Element Configuration :

Single

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

70W

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Continuous Drain Current (ID) :

7A