STP85NF55

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Application :

SWITCHING

Series :

STripFET™ II

Weight :

9.071847g

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

3V

Drain to Source Breakdown Voltage :

55V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Base Part Number :

STP85N

Turn-Off Delay Time :

70 ns

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Length :

38.1mm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

80A

Rise Time :

100ns

Height :

6.35mm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

12.7mm

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

300W Tc

Pin Count :

3

Voltage - Rated DC :

55V

Current Rating :

80A

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs (Max) :

±20V

ECCN Code :

EAR99

Number of Elements :

1

Mounting Type :

Through Hole

Number of Pins :

3

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Resistance :

8mOhm

Turn On Delay Time :

25 ns

JESD-609 Code :

e3

Fall Time (Typ) :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

980 mJ

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Package / Case :

TO-220-3

Mount :

Through Hole

Power Dissipation :

300W