STP80NF70
- Mfr.Part #
- STP80NF70
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 68V 98A TO220AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 68V
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0098Ohm
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 75 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 17 ns
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 90 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 98A Tc
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Series :
- STripFET™ II
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Base Part Number :
- STP80N
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 9.8m Ω @ 40A, 10V
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2550pF @ 25V
- Rise Time :
- 60ns
- DS Breakdown Voltage-Min :
- 68V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 98A
- Number of Terminations :
- 3
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 190W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Datasheets
- STP80NF70

N-Channel Tube 9.8m Ω @ 40A, 10V ±20V 2550pF @ 25V 75nC @ 10V 68V TO-220-3
STP80NF70 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2550pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 98A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 90 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 68V.For this transistor to work, a voltage 68V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP80NF70 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 98A
the turn-off delay time is 90 ns
a 68V drain to source voltage (Vdss)
STP80NF70 Applications
There are a lot of STMicroelectronics
STP80NF70 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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