STP80NF55

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Mfr.Part #
STP80NF55
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 55V 80A TO220
Stock
4,842
In Stock :
4,842

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
not_compliant
Pulsed Drain Current-Max (IDM) :
320A
Terminal Finish :
Matte Tin (Sn)
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Number of Elements :
1
Base Part Number :
STP80N
Transistor Application :
SWITCHING
Pin Count :
3
Power Dissipation-Max (Abs) :
210W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
DS Breakdown Voltage-Min :
55V
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
80A
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.0065ohm
Factory Lead Time :
12 Weeks
JESD-609 Code :
e3
Terminal Position :
Single
Operating Temperature (Max) :
175°C
Package / Case :
TO-220-3
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
1300 mJ
Datasheets
STP80NF55
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP80NF55 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STP80N, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, STP80NF55 pinout, STP80NF55 datasheet PDF, STP80NF55 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP80NF55 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP80NF55


Tube TO-220-3

STP80NF55 Description

STP80NF55 is a 55V N-Channel STripFETTM II Power MOSFET developed using a unique strip-based process known as "single feature size"TM. It is also noteworthy that the transistor that was produced has extremely high packing density for low resistance, rugged avalanche characteristics, and less critical alignment steps, providing a remarkable level of manufacturing reproducibility. To address the challenging efficiency requirements of today, we have improved gate charges and reduced power dissipation.


STP80NF55 Features

  • 100% avalanche tested

  • Switching application

  • Exceptional dv/dt capability

  • Application-oriented characterization


STP80NF55 Applications

  • Industrial

  • Low power DC-to-DC converters 

  • Load switching 

  • Battery management 

  • Battery-powered portable equipment


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