STP80NF55-06
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- Mfr.Part #
- STP80NF55-06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO220AB
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max :
- 300W Tc
- Number of Elements :
- 1
- Power Dissipation :
- 300W
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 40A, 10V
- Threshold Voltage :
- 3V
- Width :
- 4.6mm
- Case Connection :
- DRAIN
- Current Rating :
- 80A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pin Count :
- 3
- Turn-Off Delay Time :
- 125 ns
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 189nC @ 10V
- Height :
- 9.15mm
- Element Configuration :
- Single
- Voltage - Rated DC :
- 55V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 27 ns
- JESD-609 Code :
- e3
- Rise Time :
- 155ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STP80N
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 65 ns
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 80A
- Resistance :
- 6.5mOhm
- Factory Lead Time :
- 12 Weeks
- Weight :
- 9.071847g
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Series :
- STripFET™ II
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 55V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3
- Length :
- 10.4mm
- Datasheets
- STP80NF55-06
N-Channel Tube 6.5m Ω @ 40A, 10V ±20V 4400pF @ 25V 189nC @ 10V TO-220-3
STP80NF55-06 Overview
A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 27 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP80NF55-06 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 125 ns
a threshold voltage of 3V
STP80NF55-06 Applications
There are a lot of STMicroelectronics
STP80NF55-06 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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