STN888
- Mfr.Part #
- STN888
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A SOT223
- Stock
- 2,158
- In Stock :
- 2,158
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 5A
- Power Dissipation :
- 1.6W
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- JESD-30 Code :
- R-PDSO-G4
- Width :
- 3.5mm
- Height :
- 1.8mm
- Emitter Base Voltage (VEBO) :
- 6V
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Pins :
- 3
- hFE Min :
- 120
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Pin Count :
- 4
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Base Part Number :
- STN888
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 45V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1.2V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 5A
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1.6W
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- STN888

PNP 150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
STN888 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 10A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 5A volts.
STN888 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STN888 Applications
There are a lot of STMicroelectronics
STN888 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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