STN83003
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- Mfr.Part #
- STN83003
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A SOT223
- Stock
- 55
- In Stock ：
- 55
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 400V
- ECCN Code :
- EAR99
- Height :
- 1.8mm
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Cut Tape (CT)
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1.6W
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Terminal Finish :
- MATTE TIN
- Pin Count :
- 4
- Emitter Base Voltage (VEBO) :
- 12V
- Package / Case :
- TO-261-4, TO-261AA
- Width :
- 3.5mm
- Max Collector Current :
- 1.5A
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Base Part Number :
- STN83
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-G4
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 1mA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1V
- Max Power Dissipation :
- 1.6W
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 400V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 weeks ago)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 500mA
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 16 @ 350mA 5V
- Element Configuration :
- Single
- Length :
- 6.5mm
- Datasheets
- STN83003
NPN 150°C TJ 1mA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
STN83003 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 350mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1.5A volts.
STN83003 Features
the DC current gain for this device is 16 @ 350mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 500mV @ 100mA, 500mA
the emitter base voltage is kept at 12V
STN83003 Applications
There are a lot of STMicroelectronics
STN83003 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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