STN851
- Mfr.Part #
- STN851
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT223
- Stock
- 309
- In Stock :
- 309
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Height :
- 1.8mm
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Width :
- 3.5mm
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 60V
- Length :
- 6.5mm
- Voltage - Rated DC :
- 60V
- Power Dissipation :
- 1.6W
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- Current Rating :
- 5A
- Max Collector Current :
- 5A
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PDSO-G4
- Collector Base Voltage (VCBO) :
- 150V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.6W
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- hFE Min :
- 150
- Frequency :
- 130MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Packaging :
- Cut Tape (CT)
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 5A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 320mV
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 130MHz
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 60V
- Base Part Number :
- STN851
- Transition Frequency :
- 130MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Datasheets
- STN851

NPN 150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
STN851 Overview
This device has a DC current gain of 150 @ 2A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 500mV @ 200mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 5A volts is possible.
STN851 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
STN851 Applications
There are a lot of STMicroelectronics
STN851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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