STN3PF06
- Mfr.Part #
- STN3PF06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 2.5A SOT223
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 2.5A
- Package / Case :
- TO-261-4, TO-261AA
- Termination :
- SMD/SMT
- Weight :
- 4.535924g
- FET Type :
- P-Channel
- REACH SVHC :
- No SVHC
- Rise Time :
- 40ns
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 220mOhm
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 1.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 25V
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- STN3P
- Pin Count :
- 4
- Height :
- 1.8mm
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 40 ns
- Current Rating :
- -2.5A
- Series :
- STripFET™ II
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Fall Time (Typ) :
- 17 ns
- Voltage - Rated DC :
- -60V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Additional Feature :
- AVALANCHE ENERGY RATED
- Nominal Vgs :
- 4 V
- Number of Elements :
- 1
- Length :
- 6.5mm
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Power Dissipation :
- 2.5W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 2.5W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 20 ns
- ECCN Code :
- EAR99
- Width :
- 3.5mm
- Drain to Source Breakdown Voltage :
- -60V
- Dual Supply Voltage :
- 60V
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Threshold Voltage :
- 4V
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- STN3PF06

P-Channel Tape & Reel (TR) 220m Ω @ 1.5A, 10V ±20V 850pF @ 25V 21nC @ 10V TO-261-4, TO-261AA
STN3PF06 Description
This STN3PF06 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STN3PF06 Features
-
Extremely dv/dt capability
-
Application-oriented characterization
-
100% avalanche tested
STN3PF06 Applicaitons
-
DC-DC & DC-AC Converters
-
DC Motor control (DISK DRIVES, etc.)
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