STN3P6F6
- Mfr.Part #
- STN3P6F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V SOT223
- Stock
- 3,920
- In Stock :
- 3,920
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 3.7 ns
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.4nC @ 10V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 14 ns
- FET Type :
- P-Channel
- Case Connection :
- DRAIN
- Package / Case :
- TO-261-4, TO-261AA
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Rise Time :
- 5.3ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 3.7mm
- Power Dissipation-Max :
- 2.6W Tc
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.9mm
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 60V
- Turn On Delay Time :
- 6.4 ns
- Continuous Drain Current (ID) :
- -3A
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 1.5A, 10V
- Base Part Number :
- STN3P
- Element Configuration :
- Single
- Threshold Voltage :
- -4V
- Power Dissipation :
- 2.6W
- Length :
- 6.7mm
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Resistance :
- 130mOhm
- Drain to Source Breakdown Voltage :
- -60V
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 175°C
- Drain Current-Max (Abs) (ID) :
- 3A
- Packaging :
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 48V
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Series :
- DeepGATE™, STripFET™ VI
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STN3P6F6

P-Channel Cut Tape (CT) 160m Ω @ 1.5A, 10V ±20V 340pF @ 48V 6.4nC @ 10V 60V TO-261-4, TO-261AA
STN3P6F6 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 340pF @ 48V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -3A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.3A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
STN3P6F6 Features
a continuous drain current (ID) of -3A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 14 ns
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)
STN3P6F6 Applications
There are a lot of STMicroelectronics
STN3P6F6 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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