STN3NF06L
- Mfr.Part #
- STN3NF06L
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 4A SOT223
- Stock
- 6,230
- In Stock :
- 6,230
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 1.5A, 10V
- Current Rating :
- 4A
- Threshold Voltage :
- 2.8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 25V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 3.3W
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 16V
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 20 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Drain Current-Max (Abs) (ID) :
- 4A
- Fall Time (Typ) :
- 10 ns
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 3.3W Tc
- Terminal Form :
- Gull wing
- Height :
- 1.8mm
- Case Connection :
- DRAIN
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Length :
- 6.5mm
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- LOW THRESHOLD
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- Rise Time :
- 25ns
- Number of Terminations :
- 4
- Continuous Drain Current (ID) :
- 4A
- Base Part Number :
- STN3N
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Voltage - Rated DC :
- 60V
- Series :
- STripFET™ II
- Turn On Delay Time :
- 9 ns
- Vgs (Max) :
- ±16V
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 5V
- Width :
- 3.5mm
- Datasheets
- STN3NF06L

N-Channel Cut Tape (CT) 100m Ω @ 1.5A, 10V ±16V 340pF @ 25V 9nC @ 5V TO-261-4, TO-261AA
The Power MOSFET STN3NF06L realized with STMicroelectronics unique STripFET? process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements.
STN3NF06L Features
60V, 4A N-channel STripFET? II power MOSFET in a 4 pin SOT-223 package
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Suitable for switching applications
STN3NF06L Applications
Industrial
Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement
Enterprise systems
Data center & enterprise computingEnterprise machineEnterprise projectors
Personal electronics
Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)
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