STN1NK60Z
- Mfr.Part #
- STN1NK60Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 300MA SOT223
- Stock
- 10,452
- In Stock :
- 10,452
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 94pF @ 25V
- Voltage - Rated DC :
- 600V
- Weight :
- 4.535924g
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 5.5 ns
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Tc
- Fall Time (Typ) :
- 18 ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 400mA, 10V
- Series :
- SuperMESH™
- Length :
- 6.5mm
- Mount :
- Surface Mount
- Width :
- 3.5mm
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 0.25A
- Factory Lead Time :
- 8 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 3.3W
- Rise Time :
- 5ns
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 3.3W Tc
- Terminal Position :
- Dual
- Base Part Number :
- STN1N
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.9mm
- Current Rating :
- 250mA
- Gate Charge (Qg) (Max) @ Vgs :
- 6.9nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Threshold Voltage :
- 3.75V
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-261-4, TO-261AA
- Continuous Drain Current (ID) :
- 300mA
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Resistance :
- 15Ohm
- Turn-Off Delay Time :
- 13 ns
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- STN1NK60Z

N-Channel Tape & Reel (TR) 15 Ω @ 400mA, 10V ±30V 94pF @ 25V 6.9nC @ 10V TO-261-4, TO-261AA
? Switching applications
All features
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
ESD improved capability
Zener-protected
STN1NK60Z Discription
STN1NK60Z is a N-channel Zener protection power MOSFET developed by STMicroelectronics SuperMESH semiconductor technology, and are realized by optimizing the layout of the mature ribbon power grid gate of STMicroelectronics.
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