STN1HNK60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Terminal Form :

Gull wing

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Height :

1.82mm

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

156pF @ 25V

Length :

6.5mm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

500mA

Rds On (Max) @ Id, Vgs :

8.5 Ω @ 500mA, 10V

Power Dissipation-Max :

3.3W Tc

Number of Channels :

1

Current Rating :

400mA

Number of Elements :

1

Turn On Delay Time :

6.5 ns

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

25 mJ

Vgs (Max) :

±30V

Voltage - Rated DC :

600V

Nominal Vgs :

3 V

Base Part Number :

STN1H

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Width :

3.5mm

Number of Terminations :

4

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.3W

JESD-30 Code :

R-PDSO-G4

Radiation Hardening :

No

Series :

SuperMESH™

Package / Case :

TO-261-4, TO-261AA

Current - Continuous Drain (Id) @ 25°C :

400mA Tc

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Resistance :

8.5Ohm

Gate to Source Voltage (Vgs) :

30V

Rise Time :

5ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

25 ns

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

19 ns

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Terminal Position :

Dual

Number of Pins :

3

Pin Count :

4

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.4A