STN1NF20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STN1N

Package / Case :

TO-261-4, TO-261AA

Element Configuration :

Single

Continuous Drain Current (ID) :

1A

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

200V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

Number of Pins :

4

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

1A Tc

ECCN Code :

EAR99

Rise Time :

5.6ns

Terminal Position :

Dual

Series :

STripFET™ II

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

70 mJ

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

FET Type :

N-Channel

Mount :

Surface Mount

Power Dissipation :

2W

Vgs (Max) :

±20V

Number of Terminations :

4

Terminal Form :

Gull wing

Power Dissipation-Max :

2W Ta

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

1A

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12.4 ns

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 10V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

4A

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free