STN1NF10
- Mfr.Part #
- STN1NF10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1A SOT-223
- Stock
- 23,601
- In Stock :
- 23,601
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 1A
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Width :
- 3.7mm
- Pin Count :
- 4
- Fall Time (Typ) :
- 6.5 ns
- Power Dissipation-Max :
- 2.5W Tc
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Length :
- 6.7mm
- Base Part Number :
- STN1N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Voltage - Rated DC :
- 100V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Rise Time :
- 5.5ns
- Terminal Position :
- Dual
- Current Rating :
- 1A
- Threshold Voltage :
- 3V
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.5W
- RoHS Status :
- ROHS3 Compliant
- Series :
- STripFET™ II
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 500mA, 10V
- JESD-30 Code :
- R-PDSO-G4
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 4 ns
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 13 ns
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.8Ohm
- Height :
- 1.6mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 105pF @ 25V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 500mA
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Datasheets
- STN1NF10

N-Channel Tape & Reel (TR) 800m Ω @ 500mA, 10V ±20V 105pF @ 25V 6nC @ 10V TO-261-4, TO-261AA
STN1NF10 Description
The latest improvement of STMicroelectroni's distinctive "Single Feature SizeTM"strip-based technology is this Power MOSFET. The resultant transistor has remarkable manufacturing reproducibility thanks to its tough avalanche characteristics, exceptionally high packing density for low on-resistance, and fewer key alignment steps.
STN1NF10 Features
-
TYPICAL RDS(on) = 0.7 ?n
-
EXCEPTIONAL dv/dt CAPABILITY
STN1NF10 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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