STL47N60M6
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- Mfr.Part #
- STL47N60M6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 31A PWRFLAT HV
- Stock
- 1,259
- In Stock ：
- 1,259
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- MDmesh™ M6
- Drain to Source Voltage (Vdss) :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 57nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- 8-PowerVDFN
- Power Dissipation-Max :
- 189W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 15.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.75V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Datasheets
- STL47N60M6
N-Channel Tape & Reel (TR) 80m Ω @ 15.5A, 10V ±25V 57nC @ 10V 600V 8-PowerVDFN
STL47N60M6 Description
The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
STL47N60M6 Features
-
Reduced switching losses
-
Lower RDS(on) x area vs previous generation
-
Low gate input resistance
-
100% avalanche tested
-
Zener-protected
-
Excellent switching performance thanks to the extra driving source pin
STL47N60M6 Applications
-
Switching applications
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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