STL42N65M5
- Mfr.Part #
- STL42N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A PWRFLAT HV
- Stock
- 2,039
- In Stock :
- 2,039
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- MDmesh™ V
- Lead Free :
- Lead Free
- Resistance :
- 79mOhm
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 650V
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Power Dissipation-Max :
- 3W Ta 208W Tc
- Avalanche Energy Rating (Eas) :
- 950 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 34A
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerVDFN
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4650pF @ 100V
- Power Dissipation :
- 208W
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±25V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 34A Tc
- Rds On (Max) @ Id, Vgs :
- 79m Ω @ 16.5A, 10V
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Cut Tape (CT)
- FET Type :
- N-Channel
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 5
- Base Part Number :
- STL42
- Case Connection :
- DRAIN
- Terminal Finish :
- Matte Tin (Sn) - annealed
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Datasheets
- STL42N65M5

N-Channel Cut Tape (CT) 79m Ω @ 16.5A, 10V ±25V 4650pF @ 100V 100nC @ 10V 8-PowerVDFN
STL42N65M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 950 mJ.A device's maximum input capacitance is 4650pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL42N65M5 Features
the avalanche energy rating (Eas) is 950 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 650V voltage
STL42N65M5 Applications
There are a lot of STMicroelectronics
STL42N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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