STL3NM60N
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- Mfr.Part #
- STL3NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 0.65A POWERFLAT
- Stock
- 6,618
- In Stock ：
- 6,618
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Threshold Voltage :
- 3V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STL3
- Series :
- MDmesh™ II
- Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 600V
- REACH SVHC :
- No SVHC
- Packaging :
- Cut Tape (CT)
- Resistance :
- 1.8Ohm
- Fall Time (Typ) :
- 20 ns
- Current - Continuous Drain (Id) @ 25°C :
- 650mA Ta 2.2A Tc
- Turn On Delay Time :
- 8.6 ns
- Rds On (Max) @ Id, Vgs :
- 1.8 Ω @ 1A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 10V
- Power Dissipation-Max :
- 2W Ta 22W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Continuous Drain Current (ID) :
- 2.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 188pF @ 50V
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerVDFN
- Turn-Off Delay Time :
- 20.8 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 6.2ns
- Datasheets
- STL3NM60N
N-Channel Cut Tape (CT) 1.8 Ω @ 1A, 10V ±25V 188pF @ 50V 9.5nC @ 10V 8-PowerVDFN
STL3NM60N Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 188pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20.8 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STL3NM60N Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 20.8 ns
a threshold voltage of 3V
STL3NM60N Applications
There are a lot of STMicroelectronics
STL3NM60N applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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