STL36DN6F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

36A

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-609 Code :

e3

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

27m Ω @ 4.5A, 10V

Case Connection :

DRAIN

FET Type :

2 N-Channel (Dual)

Height :

1mm

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn)

Manufacturer Package Identifier :

PowerFLATTM_8256945_DI_typeC

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerVDFN

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STL36

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7.85 ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Max Junction Temperature (Tj) :

175°C

Pulsed Drain Current-Max (IDM) :

144A

Series :

STripFET™

Continuous Drain Current (ID) :

33A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

JESD-30 Code :

R-PDSO-F6

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

58W

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Turn-Off Delay Time :

12.1 ns

Factory Lead Time :

38 Weeks