STL35N6F3

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Mfr.Part #
STL35N6F3
Manufacturer
STMicroelectronics
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 60V 35A POWERFLAT
Stock
43,594
In Stock :
43,594

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
22m Ω @ 3A, 10V
Rise Time :
2.9ns
Power Dissipation :
80W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Radiation Hardening :
No
Number of Terminations :
5
Terminal Position :
Dual
Case Connection :
DRAIN
Series :
STripFET™ III
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Package / Case :
8-PowerVDFN
Drain Current-Max (Abs) (ID) :
35A
JESD-30 Code :
R-PDSO-F5
ECCN Code :
EAR99
Base Part Number :
STL35
Transistor Application :
SWITCHING
Number of Elements :
1
Number of Pins :
8
Power Dissipation-Max :
5W Ta 80W Tc
Avalanche Energy Rating (Eas) :
409 mJ
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
44A
Fall Time (Typ) :
4 ns
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Terminal Form :
Flat
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Turn On Delay Time :
9.7 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistance :
22mOhm
Vgs (Max) :
±20V
Turn-Off Delay Time :
19 ns
Current - Continuous Drain (Id) @ 25°C :
35A Tc
Drain to Source Breakdown Voltage :
60V
Datasheets
STL35N6F3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STL35N6F3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Package / Case:8-PowerVDFN, Base Part Number:STL35, Number of Pins:8, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, STL35N6F3 pinout, STL35N6F3 datasheet PDF, STL35N6F3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STL35N6F3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STL35N6F3


N-Channel Tape & Reel (TR) 22m Ω @ 3A, 10V ±20V 8-PowerVDFN

STL35N6F3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 409 mJ.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 35A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STL35N6F3 Features


the avalanche energy rating (Eas) is 409 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns


STL35N6F3 Applications


There are a lot of STMicroelectronics
STL35N6F3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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