STL35N6F3
- Mfr.Part #
- STL35N6F3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 35A POWERFLAT
- Stock
- 43,594
- In Stock :
- 43,594
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 3A, 10V
- Rise Time :
- 2.9ns
- Power Dissipation :
- 80W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Number of Terminations :
- 5
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Series :
- STripFET™ III
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerVDFN
- Drain Current-Max (Abs) (ID) :
- 35A
- JESD-30 Code :
- R-PDSO-F5
- ECCN Code :
- EAR99
- Base Part Number :
- STL35
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Number of Pins :
- 8
- Power Dissipation-Max :
- 5W Ta 80W Tc
- Avalanche Energy Rating (Eas) :
- 409 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 44A
- Fall Time (Typ) :
- 4 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 9.7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 22mOhm
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 19 ns
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- STL35N6F3

N-Channel Tape & Reel (TR) 22m Ω @ 3A, 10V ±20V 8-PowerVDFN
STL35N6F3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 409 mJ.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 35A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL35N6F3 Features
the avalanche energy rating (Eas) is 409 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns
STL35N6F3 Applications
There are a lot of STMicroelectronics
STL35N6F3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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