STL38N65M5
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- Mfr.Part #
- STL38N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V PWRFLAT HV
- Stock
- 359
- In Stock ：
- 359
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Cut Tape (CT)
- Width :
- 8mm
- Radiation Hardening :
- No
- Package / Case :
- 8-PowerVDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Length :
- 8mm
- Power Dissipation :
- 2.8W
- Continuous Drain Current (ID) :
- 22.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 100V
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Resistance :
- 105mOhm
- Vgs (Max) :
- ±25V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 12.5A, 10V
- Operating Temperature :
- 150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 9 ns
- Base Part Number :
- STL38
- Power Dissipation-Max :
- 2.8W Ta 150W Tc
- Fall Time (Typ) :
- 13 ns
- Drain to Source Breakdown Voltage :
- 650V
- Element Configuration :
- Single
- Turn On Delay Time :
- 66 ns
- Mount :
- Surface Mount
- Rise Time :
- 9ns
- Height :
- 950μm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Series :
- MDmesh™ V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta 22.5A Tc
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Datasheets
- STL38N65M5
N-Channel Cut Tape (CT) 105m Ω @ 12.5A, 10V ±25V 3000pF @ 100V 71nC @ 10V 8-PowerVDFN
STL38N65M5 Overview
A device's maximum input capacitance is 3000pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 22.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 9 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 66 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL38N65M5 Features
a continuous drain current (ID) of 22.5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 9 ns
STL38N65M5 Applications
There are a lot of STMicroelectronics
STL38N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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