STF6NK70Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STF6N

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 2.5A, 10V

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

200 mJ

Series :

SuperMESH™

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

30W Tc

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Rise Time :

18ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

2.5A

Pin Count :

3

Turn-Off Delay Time :

45 ns

Number of Terminations :

3

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-220-3 Full Pack

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Packaging :

Tube

Drain to Source Breakdown Voltage :

700V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

FET Type :

N-Channel

Nominal Vgs :

3.75 V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

5A

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

20A

Number of Pins :

3

Power Dissipation :

30W

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 25V

Fall Time (Typ) :

30 ns

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Drive Voltage (Max Rds On,Min Rds On) :

10V