STF6N65M2
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- Mfr.Part #
- STF6N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A TO220FP
- Stock
- 8,679
- In Stock ：
- 8,679
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 329.988449mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 20 ns
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Base Part Number :
- STF6N
- FET Type :
- N-Channel
- Vgs (Max) :
- ±25V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 6.5 ns
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- Package / Case :
- TO-220-3 Full Pack
- Turn On Delay Time :
- 19 ns
- Drain to Source Voltage (Vdss) :
- 650V
- Power Dissipation-Max :
- 20W Tc
- Series :
- MDmesh™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 7ns
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 1.35 Ω @ 2A, 10V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 226pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- Threshold Voltage :
- 3V
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 4A
- Gate to Source Voltage (Vgs) :
- 25V
- Resistance :
- 1.2Ohm
- Datasheets
- STF6N65M2
N-Channel Tube 1.35 Ω @ 2A, 10V ±25V 226pF @ 100V 9.8nC @ 10V 650V TO-220-3 Full Pack
STF6N65M2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 226pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 6.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STF6N65M2 Features
a continuous drain current (ID) of 4A
the turn-off delay time is 6.5 ns
a threshold voltage of 3V
a 650V drain to source voltage (Vdss)
STF6N65M2 Applications
There are a lot of STMicroelectronics
STF6N65M2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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