STF60N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Packaging :

Tube

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

20 ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0085Ohm

Pin Count :

3

Drain to Source Breakdown Voltage :

55V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Power Dissipation :

30W

JESD-609 Code :

e3

Continuous Drain Current (ID) :

42A

Power Dissipation-Max :

30W Tc

Pulsed Drain Current-Max (IDM) :

168A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™ III

Pbfree Code :

yes

Turn-Off Delay Time :

35 ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Package / Case :

TO-220-3 Full Pack

Rise Time :

50ns

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 32A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STF60N

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs (Max) :

±20V

Number of Pins :

3

Fall Time (Typ) :

11.5 ns

Operating Mode :

ENHANCEMENT MODE