STF6N65K3
- Mfr.Part #
- STF6N65K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 5.4A TO220FP
- Stock
- 8,399
- In Stock :
- 8,399
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 54 ns
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Turn On Delay Time :
- 14 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 50V
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 5.4A
- Power Dissipation-Max :
- 30W Tc
- Pin Count :
- 3
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 22 ns
- Factory Lead Time :
- 12 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STF6N
- Transistor Element Material :
- SILICON
- Rise Time :
- 15ns
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 1.3Ohm
- Drain to Source Breakdown Voltage :
- 650V
- Series :
- SuperMESH3™
- Power Dissipation :
- 30W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 1.3 Ω @ 2.8A, 10V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Datasheets
- STF6N65K3

N-Channel Tube 1.3 Ω @ 2.8A, 10V ±30V 880pF @ 50V 35nC @ 10V TO-220-3 Full Pack
STF6N65K3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 880pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 54 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STF6N65K3 Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 54 ns
STF6N65K3 Applications
There are a lot of STMicroelectronics
STF6N65K3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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