STF5N52U

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Series :

UltraFASTmesh™

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

4.4A

DS Breakdown Voltage-Min :

525V

Input Capacitance (Ciss) (Max) @ Vds :

529pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Fall Time (Typ) :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs (Max) :

±30V

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max :

25W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Base Part Number :

STF5N

Gate Charge (Qg) (Max) @ Vgs :

16.9nC @ 10V

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 50μA

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

11.4 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Pins :

3

Drain to Source Voltage (Vdss) :

525V

Mounting Type :

Through Hole

Turn-Off Delay Time :

23.1 ns

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Case Connection :

Isolated

Power Dissipation :

25W

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Rise Time :

13.6ns

Operating Mode :

ENHANCEMENT MODE