STF5N52K3
- Mfr.Part #
- STF5N52K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 4.4A TO220FP
- Stock
- 15,211
- In Stock :
- 15,211
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Power Dissipation :
- 25W
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.2A, 10V
- Packaging :
- Tube
- Fall Time (Typ) :
- 16 ns
- Resistance :
- 1.5Ohm
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Drain to Source Breakdown Voltage :
- 525V
- Factory Lead Time :
- 12 Weeks
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 545pF @ 100V
- Width :
- 4.6mm
- Turn-Off Delay Time :
- 29 ns
- Continuous Drain Current (ID) :
- 4.4A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Base Part Number :
- STF5N
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 25W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 3.75V
- Transistor Element Material :
- SILICON
- Series :
- SuperMESH3™
- Length :
- 10.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Height :
- 16.4mm
- Rise Time :
- 11ns
- JEDEC-95 Code :
- TO-220AB
- Turn On Delay Time :
- 9 ns
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- STF5N52K3

N-Channel Tube 1.5 Ω @ 2.2A, 10V ±30V 545pF @ 100V 17nC @ 10V TO-220-3 Full Pack
STF5N52K3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 545pF @ 100V.This device has a continuous drain current (ID) of [4.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=525V, the drain-source breakdown voltage is 525V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 29 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3.75V.Its overall power consumption can be reduced by using drive voltage (10V).
STF5N52K3 Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 29 ns
a threshold voltage of 3.75V
STF5N52K3 Applications
There are a lot of STMicroelectronics
STF5N52K3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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