STF57N65M5
- Mfr.Part #
- STF57N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 42A TO220FP
- Stock
- 348
- In Stock :
- 348
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STF57N
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 17 Weeks
- Fall Time (Typ) :
- 19 ns
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 73 ns
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 650V
- Gate to Source Voltage (Vgs) :
- 25V
- Power Dissipation :
- 40W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 12 ns
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.4mm
- Power Dissipation-Max :
- 40W Tc
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Resistance :
- 63mOhm
- Package / Case :
- TO-220-3 Full Pack
- Case Connection :
- Isolated
- Number of Pins :
- 3
- Mount :
- Through Hole
- Height :
- 16.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 100V
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 960 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 42A
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 21A, 10V
- Rise Time :
- 15ns
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.6mm
- Series :
- MDmesh™ V
- Radiation Hardening :
- No
- Datasheets
- STF57N65M5

N-Channel Tube 63m Ω @ 21A, 10V ±25V 4200pF @ 100V 98nC @ 10V TO-220-3 Full Pack
STF57N65M5 Description
These products are N-channel MDmeshTM V Power MOSFETs built on a cutting-edge proprietary vertical manufacturing technique with the well-known PowerMESHTM horizontal layout architecture from STMicroelectronics. The resulting product is especially well suited for applications that call for great power density and exceptional efficiency since it has an extraordinarily low onresistance that is unmatched among silicon-based Power MOSFETs.
STF57N65M5 Features
-
Worldwide best RDS(on)*area amongst the silicon based devices
-
Higher VDSS rating, high dv/dt capability
-
Excellent switching performance
-
Easy to drive, 100% avalanche tested
STF57N65M5 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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