STF5N105K5
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- Mfr.Part #
- STF5N105K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 1050V 3A TO220
- Stock
- 7,313
- In Stock ：
- 7,313
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 1.05kV
- Power Dissipation-Max :
- 25W Tc
- Drain Current-Max (Abs) (ID) :
- 3A
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Series :
- MDmesh™
- Continuous Drain Current (ID) :
- 3A
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Package / Case :
- TO-220-3 Full Pack
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 31 ns
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 8.5ns
- Turn On Delay Time :
- 15.5 ns
- Weight :
- 329.988449mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 100V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Base Part Number :
- STF5N
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 1.5A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Resistance :
- 2.9Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 1050V
- Gate Charge (Qg) (Max) @ Vgs :
- 12.5nC @ 10V
- FET Type :
- N-Channel
- Factory Lead Time :
- 17 Weeks
- Fall Time (Typ) :
- 24 ns
- Datasheets
- STF5N105K5
N-Channel Tube 3.5 Ω @ 1.5A, 10V ±30V 210pF @ 100V 12.5nC @ 10V 1050V TO-220-3 Full Pack
STF5N105K5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 210pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.05kV. And this device has 1.05kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 31 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 1050V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STF5N105K5 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.05kV voltage
the turn-off delay time is 31 ns
a 1050V drain to source voltage (Vdss)
STF5N105K5 Applications
There are a lot of STMicroelectronics
STF5N105K5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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