STF10N95K5
- Mfr.Part #
- STF10N95K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 8A TO220FP
- Stock
- 9,536
- In Stock :
- 9,536
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Base Part Number :
- STF10N
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 122 mJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.8Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 32A
- Factory Lead Time :
- 17 Weeks
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- JEDEC-95 Code :
- TO-247
- Power Dissipation-Max :
- 30W Tc
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 100V
- DS Breakdown Voltage-Min :
- 950V
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 950V
- Series :
- SuperMESH5™
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 8A
- Package / Case :
- TO-220-3 Full Pack
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Continuous Drain Current (ID) :
- 8A
- Datasheets
- STF10N95K5

N-Channel Tube 800m Ω @ 4A, 10V ±30V 630pF @ 100V 22nC @ 10V 950V TO-220-3 Full Pack
STF10N95K5 Description
These N-channel Zener-protected Power MOSFETs were created utilizing ST's ground-breaking SuperMESHTM 5 technology, which is based on a ground-breaking patented vertical structure and is avalanche-rugged at very high voltage. The end result is a significantly lower on-resistance and extremely low gate charge for applications that demand a high power density.
STF10N95K5 Features
-
Worldwide best FOM (figure of merit)
-
Ultra low gate charge
-
100% avalanche tested
-
Zener-protected
STF10N95K5 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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