STF100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Mounting Type :

Through Hole

Turn On Delay Time :

27 ns

Continuous Drain Current (ID) :

45A

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Base Part Number :

STF100N

Pulsed Drain Current-Max (IDM) :

180A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Terminations :

3

Vgs (Max) :

±20V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Resistance :

80mOhm

Width :

4.6mm

Power Dissipation-Max :

30W Tc

Factory Lead Time :

13 Weeks

Packaging :

Tube

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

15 ns

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

45A Tc

ECCN Code :

EAR99

Lead Free :

Lead Free

Power Dissipation :

30W

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

400 mJ

Rds On (Max) @ Id, Vgs :

8m Ω @ 22.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Rise Time :

40ns

Element Configuration :

Single

Length :

10.4mm

Height :

16.4mm

Turn-Off Delay Time :

46 ns

Mount :

Through Hole

Series :

DeepGATE™, STripFET™ VII

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ