STF100N6F7

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Mfr.Part #
STF100N6F7
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 60V 46A TO220FP
Stock
1,425
In Stock :
1,425

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
25W Tc
Current - Continuous Drain (Id) @ 25°C :
46A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
22 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Drain to Source Voltage (Vdss) :
60V
Vgs (Max) :
±20V
Package / Case :
TO-220-3 Full Pack
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
5.6m Ω @ 23A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Part Number :
STF100N
Lead Free :
Lead Free
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
ECCN Code :
EAR99
FET Type :
N-Channel
Continuous Drain Current (ID) :
46A
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
STripFET™ F7
Input Capacitance (Ciss) (Max) @ Vds :
1980pF @ 25V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Datasheets
STF100N6F7
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF100N6F7 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Base Part Number:STF100N, STF100N6F7 pinout, STF100N6F7 datasheet PDF, STF100N6F7 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF100N6F7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF100N6F7


N-Channel Tube 5.6m Ω @ 23A, 10V ±20V 1980pF @ 25V 30nC @ 10V 60V TO-220-3 Full Pack

STF100N6F7 Description


This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.



STF100N6F7 Features


  • Among the lowest RDS(on) on the market

  • Excellent figure of merit (FoM)

  • Low Crss/Ciss ratio for EMI immunity

  • High avalanche ruggedness



STF100N6F7 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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