STF100N6F7
- Mfr.Part #
- STF100N6F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 46A TO220FP
- Stock
- 1,425
- In Stock :
- 1,425
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 25W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 22 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 23A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- STF100N
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 46A
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- STripFET™ F7
- Input Capacitance (Ciss) (Max) @ Vds :
- 1980pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Datasheets
- STF100N6F7

N-Channel Tube 5.6m Ω @ 23A, 10V ±20V 1980pF @ 25V 30nC @ 10V 60V TO-220-3 Full Pack
STF100N6F7 Description
This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STF100N6F7 Features
-
Among the lowest RDS(on) on the market
-
Excellent figure of merit (FoM)
-
Low Crss/Ciss ratio for EMI immunity
-
High avalanche ruggedness
STF100N6F7 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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