STD5NM60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.4mm

Avalanche Energy Rating (Eas) :

200 mJ

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

96W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Current Rating :

5A

Turn On Delay Time :

14 ns

Series :

MDmesh™

Base Part Number :

STD5N

Width :

6.2mm

Resistance :

1Ohm

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

5A

Drain to Source Breakdown Voltage :

600V

Drain Current-Max (Abs) (ID) :

5A

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.5A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Voltage - Rated DC :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

10 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

Rise Time :

10ns

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Threshold Voltage :

4V

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Number of Pins :

3

Power Dissipation :

96W

ECCN Code :

EAR99

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

20A

Element Configuration :

Single

Radiation Hardening :

No

Length :

6.6mm

Pin Count :

3

Turn-Off Delay Time :

23 ns

Current - Continuous Drain (Id) @ 25°C :

5A Tc