STD50NH02L-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

60W Tc

Pin Count :

3

Series :

STripFET™ III

Qualification Status :

Not Qualified

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

RoHS Status :

ROHS3 Compliant

Base Part Number :

STD50N

Drain-source On Resistance-Max :

0.0105Ohm

Current Rating :

50A

Rise Time :

130ns

Vgs (Max) :

±20V

FET Type :

N-Channel

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOW THRESHOLD

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Continuous Drain Current (ID) :

50A

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Packaging :

Tube

Voltage - Rated DC :

24V

Pulsed Drain Current-Max (IDM) :

200A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 25A, 10V

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

280 mJ

Transistor Application :

SWITCHING

Terminal Position :

Single