STD5406NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

150A

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

3W Ta 100W Tc

Pin Count :

3

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

12.2A Ta 70A Tc

Number of Pins :

3

Published :

2011

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

12.2A

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

450 mJ

Mounting Type :

Surface Mount

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Lifecycle Status :

LIFETIME (Last Updated: 17 hours ago)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Element Configuration :

Single

DS Breakdown Voltage-Min :

40V

Number of Terminations :

2

Drain-source On Resistance-Max :

0.01Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 32V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

70A

Pbfree Code :

yes

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

10m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)