STD50N03L-1
- Mfr.Part #
- STD50N03L-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 40A IPAK
- Stock
- 32,560
- In Stock :
- 32,560
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 125ns
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation-Max :
- 60W Tc
- Base Part Number :
- STD50N
- Element Configuration :
- Single
- Fall Time (Typ) :
- 45 ns
- Continuous Drain Current (ID) :
- 40A
- FET Type :
- N-Channel
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1434pF @ 25V
- Mount :
- Through Hole
- Packaging :
- Tube
- Power Dissipation :
- 60W
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 5V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 20A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pin Count :
- 3
- Series :
- STripFET™ III
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Turn-Off Delay Time :
- 14 ns
- Vgs (Max) :
- ±20V
- Datasheets
- STD50N03L-1

N-Channel Tube 10.5m Ω @ 20A, 10V ±20V 1434pF @ 25V 14nC @ 5V TO-251-3 Short Leads, IPak, TO-251AA
STD50N03L-1 Overview
A device's maximum input capacitance is 1434pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
STD50N03L-1 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
STD50N03L-1 Applications
There are a lot of STMicroelectronics
STD50N03L-1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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