STD5NM60-1
Or copy the link below:
- Mfr.Part #
- STD5NM60-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A IPAK
- Stock
- 15,317
- In Stock ：
- 15,317
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Pin Count :
- 3
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 2.5A, 10V
- Mounting Type :
- Through Hole
- Series :
- MDmesh™
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drain to Source Breakdown Voltage :
- 600V
- Length :
- 6.6mm
- Threshold Voltage :
- 4V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Turn On Delay Time :
- 14 ns
- Current Rating :
- 8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Packaging :
- Tube
- Factory Lead Time :
- 26 Weeks
- Power Dissipation-Max :
- 96W Tc
- Width :
- 2.4mm
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 23 ns
- Continuous Drain Current (ID) :
- 5A
- Pulsed Drain Current-Max (IDM) :
- 20A
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Fall Time (Typ) :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Height :
- 6.2mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- STD5N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 650V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Rise Time :
- 10ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 96W
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 1Ohm
- Drain Current-Max (Abs) (ID) :
- 5A
- Datasheets
- STD5NM60-1
N-Channel Tube 1 Ω @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STD5NM60-1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD5NM60-1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V
STD5NM60-1 Applications
There are a lot of STMicroelectronics
STD5NM60-1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
- Follow Us
-
- Payment
-
- Subscribe
- Certification
-
-
