STD5NM50T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

7.5A

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Width :

6.2mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Height :

2.4mm

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

415pF @ 25V

Mount :

Surface Mount

Power Dissipation :

100W

Length :

6.6mm

Voltage - Rated DC :

500V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STD5N

Resistance :

800mOhm

Turn On Delay Time :

16 ns

Drain Current-Max (Abs) (ID) :

5A

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Pins :

3

ECCN Code :

EAR99

Series :

MDmesh™

Weight :

4.535924g

Rise Time :

8ns

Power Dissipation-Max :

100W Tc

Continuous Drain Current (ID) :

7.5A

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

6 ns

Threshold Voltage :

4V

Packaging :

Cut Tape (CT)

Drain to Source Breakdown Voltage :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.5A, 10V

Element Configuration :

Single