STD5NM50AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STD5N

Reference Standard :

AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

100W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.5A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

415pF @ 100V

Drain Current-Max (Abs) (ID) :

7.5A

Avalanche Energy Rating (Eas) :

300 mJ

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Factory Lead Time :

16 Weeks

Pulsed Drain Current-Max (IDM) :

30A

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

500V

Series :

MDmesh™

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Surface Mount :

yes

Transistor Application :

SWITCHING

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Drain-source On Resistance-Max :

0.8Ohm