STD5NK60ZT4
- Mfr.Part #
- STD5NK60ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A DPAK
- Stock
- 17,438
- In Stock :
- 17,438
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Power Dissipation :
- 90W
- Power Dissipation-Max :
- 90W Tc
- Fall Time (Typ) :
- 25 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Base Part Number :
- STD5N
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 20A
- Threshold Voltage :
- 3V
- Element Configuration :
- Single
- Turn On Delay Time :
- 16 ns
- Mounting Type :
- Surface Mount
- Height :
- 2.48mm
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Nominal Vgs :
- 3.75 V
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 690pF @ 25V
- Number of Elements :
- 1
- Manufacturer Package Identifier :
- DPAK-0068772-C2
- Continuous Drain Current (ID) :
- 5A
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 5A
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Series :
- SuperMESH™
- Avalanche Energy Rating (Eas) :
- 220 mJ
- Length :
- 6.6mm
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 36 ns
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JEDEC-95 Code :
- TO-252AA
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 2.5A, 10V
- Drain to Source Breakdown Voltage :
- 600V
- Resistance :
- 1.6Ohm
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Number of Terminations :
- 2
- Current Rating :
- 5A
- Width :
- 6.2mm
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Rise Time :
- 25ns
- Voltage - Rated DC :
- 650V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Datasheets
- STD5NK60ZT4
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N-Channel Tape & Reel (TR) 1.6 Ω @ 2.5A, 10V ±30V 690pF @ 25V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD5NK60ZT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 220 mJ.A device's maximal input capacitance is 690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STD5NK60ZT4 Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 20A.
a threshold voltage of 3V
STD5NK60ZT4 Applications
There are a lot of STMicroelectronics
STD5NK60ZT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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