STD5NK52ZD-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

FET Type :

N-Channel

Qualification Status :

Not Qualified

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

17.6A

Fall Time (Typ) :

15 ns

Turn-Off Delay Time :

23.1 ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

70W Tc

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

529pF @ 25V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

4.4A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

520V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

Terminal Finish :

Matte Tin (Sn) - annealed

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

1.22Ohm

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Series :

SuperMESH™

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Number of Terminations :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

16.9nC @ 10V

Rise Time :

13.6ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation :

70W

Avalanche Energy Rating (Eas) :

170 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant