STD5NK50ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.6mm

Drain to Source Breakdown Voltage :

500V

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

1.5Ohm

Rise Time :

10ns

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

70W Tc

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Element Configuration :

Single

Threshold Voltage :

3.75V

Voltage - Rated DC :

500V

Width :

6.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Series :

SuperMESH™

Turn-Off Delay Time :

32 ns

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds :

535pF @ 25V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Pin Count :

3

Packaging :

Cut Tape (CT)

Number of Pins :

3

Turn On Delay Time :

15 ns

JESD-609 Code :

e3

Height :

2.4mm

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Current Rating :

4.4A

RoHS Status :

ROHS3 Compliant

Power Dissipation :

70W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

4.4A

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Base Part Number :

STD5N