STD5N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

15 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.7A, 10V

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Lead Free :

Lead Free

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

211pF @ 100V

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

70 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

11.8 ns

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

80 mJ

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Weight :

3.949996g

Contact Plating :

Tin

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

3.5A

Number of Pins :

3

FET Type :

N-Channel

Rise Time :

3ns

Number of Channels :

1

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

45W Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STD5N

Terminal Form :

Gull wing

Series :

MDmesh™ II Plus

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks