STB9NK90Z
- Mfr.Part #
- STB9NK90Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 8A D2PAK
- Stock
- 21,866
- In Stock :
- 21,866
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 55 ns
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 1.3 Ω @ 3.6A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 8A
- Fall Time (Typ) :
- 11 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 8A
- Continuous Drain Current (ID) :
- 8A
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 245
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- SuperMESH™
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 220 mJ
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Power Dissipation :
- 160W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 160W Tc
- Rise Time :
- 13ns
- Voltage - Rated DC :
- 900V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Base Part Number :
- STB9N
- Number of Elements :
- 1
- Turn On Delay Time :
- 22 ns
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 900V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 2115pF @ 25V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Pin Count :
- 3
- Datasheets
- STB9NK90Z

N-Channel Tape & Reel (TR) 1.3 Ω @ 3.6A, 10V ±30V 2115pF @ 25V 72nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB9NK90Z Description
STB9NK90Z is a type of N-channel Zener-protected SuperMESH? power MOSFET provided by STMicroelectronics based on the well-established PowerMESH? technology and strip-based PowerMESH? layout. It is able to minimize on-state resistance and gate charge while ensuring a very good dv/dt capability for the most demanding applications.
STB9NK90Z Features
-
Extremely high dv/dt capability
-
100% avalanche tested
-
Low gate charge
-
Low on-state resistance
-
Available in the D2PAK package
STB9NK90Z Applications
-
Switching applications
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