STB9NK60ZDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.35mm

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

FET Type :

N-Channel

Length :

10.4mm

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

15 ns

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

JESD-609 Code :

e3

Resistance :

950mOhm

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Turn On Delay Time :

22 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation :

125W

Power Dissipation-Max :

125W Tc

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Number of Elements :

1

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Application :

SWITCHING

Height :

4.6mm

Drain Current-Max (Abs) (ID) :

7A

Rise Time :

17ns

REACH SVHC :

No SVHC

Number of Terminations :

2

Nominal Vgs :

3.5 V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.5A, 10V

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

7A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

28A

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

600V

Drain to Source Breakdown Voltage :

600V

Series :

SuperFREDmesh™

Turn-Off Delay Time :

42 ns

Current Rating :

7A

Base Part Number :

STB9N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing