STB95N4F3
- Mfr.Part #
- STB95N4F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A D2PAK
- Stock
- 377
- In Stock :
- 377
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 15 ns
- Series :
- STripFET™ III
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 40 ns
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 40A, 10V
- Fall Time (Typ) :
- 15 ns
- Resistance :
- 5mOhm
- Number of Pins :
- 3
- Power Dissipation-Max :
- 110W Tc
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 40V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 80A
- Power Dissipation :
- 110W
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 50ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Number of Elements :
- 1
- Base Part Number :
- STB95N
- Datasheets
- STB95N4F3

N-Channel Tape & Reel (TR) 5.8m Ω @ 40A, 10V ±20V 2200pF @ 25V 54nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB95N4F3 Overview
A device's maximal input capacitance is 2200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
STB95N4F3 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 40 ns
STB95N4F3 Applications
There are a lot of STMicroelectronics
STB95N4F3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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