STB95N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

24.5nC @ 4.5V

Threshold Voltage :

1V

Continuous Drain Current (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 40A, 10V

Operating Temperature :

175°C TJ

Power Dissipation-Max :

70W Tc

FET Type :

N-Channel

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Base Part Number :

STB95N

REACH SVHC :

No SVHC

Series :

DeepGATE™, STripFET™ VI

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Number of Terminations :

2

Number of Elements :

1

Turn On Delay Time :

19 ns

Height :

4.6mm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

Matte Tin (Sn) - annealed

Width :

10.4mm

Rise Time :

91ns

Length :

10.75mm

Power Dissipation :

70W

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Pins :

3

Fall Time (Typ) :

23.4 ns

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

24.5 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.007Ohm

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)