SST2907AT116
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- Mfr.Part #
- SST2907AT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SST3
- Stock
- 1,504
- In Stock ：
- 1,504
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 350mW
- Terminal Form :
- Gull wing
- VCEsat-Max :
- 0.6 V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Base Part Number :
- T2907A
- hFE Min :
- 50
- Voltage - Rated DC :
- -60V
- Collector-Base Capacitance-Max :
- 7pF
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- -5V
- HTS Code :
- 8541.21.00.75
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- -600mA
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 350mW
- Transition Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Saturation Voltage :
- -1.6V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Turn Off Time-Max (toff) :
- 100ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 600mA
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- -60V
- Current Rating :
- -600mA
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- SST2907AT116
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SST2907AT116 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1.6V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maintaining the continuous collector voltage at -600mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).200MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
SST2907AT116 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
SST2907AT116 Applications
There are a lot of ROHM Semiconductor
SST2907AT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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